Conference Agenda
The timing of the UCPSS program, listed below, is specified in UTC+2h time (it is the local “summer time” in West-Europe).
At previous editions of UCPSS the participants appreciated the strong and lively interactions during sessions through Q&A as well as the informal interactions.
In an attempt to support lively interactions during sessions through Q&A as much as possible in this on-line edition the organisers require, all presenters to give a life presentation and particularly be life on-line for the discussion and Q&A part. Accordingly we encourage the attendees to ask questions in a life fashion (i.e. through live video connection).
A life format has the downside that it puts additional pressure on the timing for a lot of attendants. The time schedule has been made with speakers of Asia scheduled in the morning (i.e. local afternoon to evening) and speakers from USA scheduled in the afternoon (i.e. local early morning). The time slots, though not ideal for a lot of the speakers, are hopefully acceptable for all presenters.
All presentations, including the discussion and Q&A, will be recorded and stored on the website for review by registrants till May 15th 2021. This allows all registrants to conveniently (re-)view the presentations on-demand.
Monday 12 April 2021 Tutorials |
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| Tentative schedule, subject to changes | ||
| 11:00 – 12:00 | 1 – Basic aspects of cleaning | ||
| Paul Mertens - Imec Leuven, Belgium | ||
| 12:00 – 13:00 | 2 – Cleaning of Ge and GeSi Semiconductor surface | ||
| BREAK | ||
| 16:00 – 17:00 | 3 – Exploring the Cleaning Chemistry/Substrate Synergy for Enhanced Nanoparticle Removalr | ||
| Jason Keleher - Lewis University, Department of Chemistry, Romeoville IL, USA | ||
| 17:00 – 18:00 | 4 – Surface cleaning of wide band gap semiconductors | ||
Click here for the printable program
Tuesday 13 April 2021 |
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| 08:20 – 08:40 | WELCOME AND OPENING | |
| 08:20 - 08:40 | 1.1 - Welcome and opening address | ||
| Paul Mertens, imec, Belgium | ||
| 08:40 – 09:20 | SESSION 1 - FEOL: ETCHING OF GROUP IV SEMICONDUCTORS | |
| 08:40 - 09:00 | 1.1 - Reaction Kinetics of Poly-Si Etching in TMAH Solution | ||
| Park, taegun, Lim, Sangwoo, Yonsei University, Republic of Korea | ||
| 09:00 – 09:20 | 1.2 - Surface Chemistry and Nanoscale Wet Etching of Group IV Semiconductors in Acidic H2O2 Solutions | ||
| van Dorp, Dennis, imec, Belgium | ||
| 09:20 – 10:40 | SESSION 2 - SUFEOL: ETCH DIELECTRIC FILMS & REMOVAL OF MASKING FILMS | |
| 09:20 – 09:40 | 2.1 - Highly Selective Etching between Different Oxide Films by Vapor Phase Cleaning | ||
| Nishihara, Kazuki; Inaba, Masaki; Takahashi, Hiroaki SCREEN Semiconductor Solutions Co., Ltd., Japan |
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| 09:40 – 10:00 | 2.2 - Kinetic Study on the Si3N4 Etching in Superheated Water | ||
| Son, Changjin; Lim, Sangwoo, Yonsei University, Republic of Korea | ||
| 10:00 – 10:20 | 2.3 - Silicon Corrosion during Selective Silicon Nitride Etch with Hot Diluted Hydrofluoric Acid | ||
| Garnier, Philippe (1); Massin, Thomas (1); Chatelet, Corentin (1); Oghdayan, Emmanuel (1); Lauerhaas, Jeffrey (2); Morote, Carlos (2); Butterbaugh, Jeffery (2) 1. STMicroelectronics, France; 2. TEL Manufacturing and Engineering of America, Inc, USA |
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| 10:20 – 10:40 | 2.4 - High Performance, Eco-Friendly SPM Cleaning Technology Using Integrated Bench-Single Wafer Cleaning System | ||
| Henry, sally ann (1); Chen, Fuping (1); Wang, david (1); zhang, xiaoyan (1); wang, wenjun (1); Ren, Shuchao (1); Jia, Shena (1); Wang, Jun (1); wang, jane (1); Wang, Xi (1); Tang, Baoguo (1); Lee, Jason (1); KIm, YY (1); Chae, KK (1); Lee, SH (1); Lee, Bruce (1); Lei, Haibo (2); Zhang, Yu (2); Zhang, Tao (2); Huang, Jun (2); Li, Fang (2); Wang, Chunwei (2); Li, Hong (2); Yang, Yi (2) 1: ACM Research (Shanghai), Inc, United States of America; 2: Shanghai Huali Microelectronics corporation |
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| 10:40 – 11:00 | BREAK | |
| 11:00 – 13:10 | SESSION 3 - CONTAMINATION AND CONTAMINATION CONTROL | |
| 11:00 – 11:20 | 3.1 - Direct Analysis of Ultra Trace Metallic Particles in NH3 and HCl Gases by GED-ICP-MS | ||
| Kawabata, Katsu; Nishiguchi, Kohei; Ichinose, Tatsu IAS Inc., Japan | ||
| 11:20 – 11:40 | 3.2 - Investigation of Contaminants in Single Wafer Wet Cleaning Using Isopropyl Alcohol | ||
| Oh, Seungjun (1); Lee, Sunyoung (2); Kim, Heehwan (3); IAS Inc., Japan | ||
| 11:40 – 12:00 | 3.3 - Cl-Containing Microplastics from the Environment | ||
| Knotter, D. Martin; Sharma, Pradeep; Goumans, Leon NXP Semiconductors |
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| 12:00 – 12:20 | 3.4 - Experimental Wafer Carrier Contamination Analysis and Monitoring in Fully Automated 300 mm Power Production Lines | ||
| Zängle, Clara (1); Pfeffer, Markus (1); Franze, Peter (2); Schneider, Germar (2); Bauer, Anton (1) 1: Fraunhofer Institute of integrated Systems and Device Technology; 2: Infineon Technologies Dresden GmbH & Co. KG |
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| 12:20 – 12:40 | 3.5 - Characterization and Removal of Metallic Contamination in Process Chemicals Using Single Particle Inductively Coupled Plasma Mass Spectrometry (SP-ICP-MS) |
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| Sampath, Siddarth; Maharjan, Kusum; Ozzello, Anthony; Bhabhe, Ashutosh - Entegris, United States of America | ||
| 12:40 – 13:10 | 3.6 - Surface Cleaning Challenges for Organic Light Emitting Diodes | ||
| Chris Giebink Pennsylvania State University, United States of America |
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| 13:10 – 13:30 | BREAK | |
| 13:30 – 15:00 | SESSION 4 - FEOL: SURFACE CHEMISTRY AND ETCHING OF III-V COMPOUND SEMICONDUCTOR | |
| 13:30 – 13:50 | 4.1 - Analysis of Surface Reaction for Group III-V Compound Semiconductors in Functional Water | ||
| Nishio, Kenya (1); Oinoue, Takashi (1); Saito, Suguru (1); Hagimoto, Yoshiya (1); Ogawa, Yuuichi (2); Ida, Junichi (2); Iwamoto, Hayato (1) 1: Sony Semiconductor Solutions Corporation, Japan; 2: Kurita Water Industries Ltd. |
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| 13:50 – 14:10 | 4.2 - Effect of Surface Oxidation on the Material Loss of InGaAs in Acidic Solutions | ||
| Na, Jihoon; Lim, Sangwoo - Yonsei University, Republic of Korea | ||
| 14:10 – 14:30 | 4.3 - Characterization of Wet Chemical Atomic Layer Etching of InGaAs | ||
| omoki, Hirano; Kenya, Nishio; Takashi, Fukatani; Suguru, Saito; Yoshiya, Hagimoto; Hayato, Iwamoto - Sony Semiconductor Solutions, Japan | ||
| 14:30 – 15:00 | 4.4 - GaN MOS Structures with Low Interface Trap Density | ||
| Ronming Chu - Pennsylvania State University, United States of America | ||
| 15:00 – 15:40 | BREAK | |
| 15:40 – 16:20 | SESSION 5 - FEOL: SURFACE PREPARATION OF GROUP IV SEMICONDUCTORS | |
| 15:40 – 16:00 | 5.1 - Towards Si-Cap-Free SiGe Passivation: Impact of Surface Preparation on Low-Pressure Oxidation of SiGe | ||
| Wostyn, Kurt; Arimura, Hiroaki; Kimura, Yosuke; Hikavyy, Andriy; Rondas, Dirk; Conard, Thierry; Ragnarsson, Lars-Ake; Horiguchi, Naoto imec, Belgium |
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| 16:00 – 16:20 | 5.2 - Wet Chemical Cleaning of Organosilane Monolayers | ||
| Hinckley, Adam; Muscat, Anthony - University of Arizona, United States of America | ||
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Wednesday 14 April 2021 |
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| 08:00 – 10:00 | SESSION 6 - WET PROCESSING IN NARROW SPACES AND PATTERN COLLAPSE | |
| Chair: Co-chair: |
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| 08:00 – 08:20 | 6.1 - Effect of Hydrophobicity and Surface Potential of Siliconon SiO2 Etching in Nanometer-Sized Narrow Spaces | ||
| Ueda, Dai (1); Hanawa, Yousuke (1); Kitagawa, Hiroaki (1); Fujiwara, Naozumi (2); Otsuji, Masayuki (2); Takahashi, Hiroaki (2); Fukami, Kazuhiro (3) - 1: SCREEN Holdings Co., Ltd., Japan |
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| 08:20 – 08:40 | 6.2 - Formulation and Evaluation of Diluted Sulfuric-Peroxide-HF (DSP+) Mixtures for Cleaning High-Aspect Ratio Contacts in 3D NAND | ||
| An, Kook-Hyun; Kim, Hyun-Tae; Kim, Tae-Gon; Park, Jin-Goo - Hanyang University, Korea, Republic of (South Korea | ||
| 08:40 – 09:00 | 6.3 - PDMS Micro-Channels Application for the Study of Dynamic Wetting of Nanoetched Silicon Surfaces Based on Acoustic Characterization Method | ||
| Salhab, Abbas (1,2); Carlier, Julien (1); Campistron, Pierre (1); Neyens, Marc (2); Toubal, Malika (1); Nongaillard, Bertrand (1); Thomy, Vincent (3) 1: Univ. Polytechnique Hauts-de-France, CNRS, Univ. Lille, ISEN, Centrale Lille, UMR 8520 - IEMN -Institut d’Électronique de Microélectronique et de Nanotechnologie, DOAE - Département d’Opto-Acousto-Électronique, F-59313 Valenciennes, France; 2: STMicroelectronics, 850 rue Monnet, F-38926 Crolles, France; 3: Institute of Electronics, Microelectronics and Nanotechnology, Univ. Lille, UMR 8520 - IEMN, F-59000 Lille, France |
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| 09:00 – 09:20 | 6.4 - Characterization of Wetting of Deep Silica Nanoholes by Aqueous Solutions Using ATR-FTIR | ||
| Vereecke, Guy (1); Dochain, Denis (2); De Coster, Hanne (3); Conlan, Shona (4); Nurekeyeva, Kunsulu (3); Nsimba, Anthony (4); 1: imec, Belgium; 2: UCLouvain, Belgium; 3: KULeuven, Belgium; 4: TU Dublin, Ireland |
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| 09:20 – 09:40 | 6.5 - New Test Structure Development for Pattern Collapse Evaluations | ||
| Xu, XiuMei - imec, Belgium | ||
| 09:40 – 10:00 | 6.6 - Breakthrough of Sublimation Drying by Liquid Phase Deposition | ||
| Sasaki, Yuta (1); Hanawa, Yosuke (1); Otsuji, Masayuki (2); Fujiwara, Naozumi (2); Kato, Masahiko (2); Yamaguchi, Yu (2); Takahashi, Hiroaki (2) 1: SCREEN Holdings Co., Ltd., Japan; 2: SCREEN Semiconductor Solutions Co., Ltd., Japan |
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| 08:00 – 10:00 | SESSION 7 - PARTICLE REMOVAL | |
| 10:00 – 10:20 | 7.1 - Study on Uniform Deposition on 300 mm Silicon Wafer with sub-100 nm Sized Particles for Cleaning Application | ||
| Lee, Seungjae (1); Hong, Seokjun (1); Oh, Haerim (3); Chae, Seung-ki (4); Kim, Taesung (1,2) 1: School of Mechanical Engineering, Sungkyunkwan University, Korea; 2: SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University, Korea; 3: Engineering Lab, SEMES, Korea; 4: Research & Business Foundation, Sungkyunkwan University, Korea |
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| 10:20 – 10:40 | 7.2 - Ultrafine Particle Removal in the Wafer Cleaning Process Using High Concentration DIO3-DHF Mixture | ||
| HAN, HYEON JOON; LEE, Hunhee; Kim, Charles; Kim, Yongmok - 1: SCREEN Holdings Co., Ltd., Japan; | ||
| 10:40 – 11:00 | 7.3 - Particle Removal in Ultrasonic Water Flow Cleaning Role of Cavitation Bubbles as Cleaning Agents | ||
| Ando, Keita (1); Sugawara, Mao (1); Sakota, Riria (1); Ishibashi, TomoatsuIshibashi (2); Matsuo, Hisanori (2); Watanabe, Katsuhide (2) 1: Keio University, Japan; 2: Ebara Corporation, Japan |
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| 11:00 – 11:20 | 7.4 - Scalable Particle Removal for sub-5 nm Nodes | ||
| Yoshida, Yukifumi (1); Akiyama, Katsuya (1); Zhang, Song (1); Ueda, Dai (2); Inaba, Masaki (1); Takahashi, Hiroaki (1) 1: SCREEN Semiconductor Solutions Co., Ltd.; 2: SCREEN Holdings Co., Ltd. |
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| 11:20 - 11:40 | 7.5 - The Effect of Thermal Aging on Nanoparticle Removal | ||
| Kim, Yeoho (1); Jin, Seung-Wan (1); Kim, Hyun-Tae (2); Kim, Tae-Gon (3); Won, Kyu-Hwang (4); Park, Jin-Goo (1,2) 1: Department of Materials Science and Chemical Engineering, Hanyang University, Ansan, 15588, Republic of Korea; 2: Department of Bio-Nano Technology, Hanyang University, Ansan, 15588, Republic of Korea; 3: Department of Smart Convergence Engineering, Hanyang University, Ansan, 15588, Republic of Korea; 4: Samsung Electronics Co., Ltd, Hwaseong, 18448, Republic of Korea |
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| 11:40 – 12:00 | BREAK | |
| 12:00 - 12:30 | POSTER ANNOUNCEMENTS |
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| Each poster author is allocated 3 minutes to advertise his/her poster using max 3 slides | ||
| P01 - Simulation of Rayleigh Bubble Growth near a No-Slip Rigid Wall Tanaka, Tomoya; Ando, Keita - Keio University, Japan |
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P02 - Interaction between Free-Surface Oscillation and Bubble Translation in a Megasonic Cleaning Bath |
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| P03 - Removal of SOC Hard Mask for Patterning of Work Function Metal by Thermally Activated Ozone Gas S. Iwahata, M. Inaba, F. Sebaai and E. Altamirano Sanchez - Screen Semiconductor Solutions Co Ltd, Japan |
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| P04 - Removal of Post Etch Residue on BEOL Low-K with Nanolift Y. Akanishi, Q. T. Le and Efrain Altamirano Sanchez - Screen Semiconductor Solutions Co Ltd, Japan |
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| P05 - Selective Ru or Co Etch for 3nm Applications HSU, Chien-Pin Sherman; Chen, Polly Yi-Ting - Avantor, Taiwan |
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| P06 - Remote Plasma Etching of Backend Semiconductor Materials for Reliable Packaging) Evertsen, Rogier; Beckers, Nicolle; Wang, Shaoying; Van der Stam, Richard - ASM PT, The Netherlands |
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| P07 - Wafer Container Monitoring concerning Airborne Molecular Contaminations along a 300 mm Power Semiconductor Production Flow) Franze, Peter (1); Schneider, Germar (1); Kaskel, Stefan (2) 1: Infineon Technologies Dresden GmbH & Co. KG, Germany; 2: Chair of Inorganic Chemistry I, Technical University of Dresden, Germany |
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| P08 - Si1-XGeX Selective Etchant for Gate-All-Around Transistors Harada, Ken (1); Suzuki, Tatsunobu (2); Kusano, Tomohiro (1); Takeshita, Kan (1); Oniki, Yusuke (3); Altamirano-Sánchez, Efrain (3); Struyf, Herbert (3); Holsteyns, Frank (3) 1: Mitsubishi Chemical Corporation, Japan; 2: Mitsubishi Chemical Corporation, Japan; 3: imec, Belgium |
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P09 - Challenges and Solutions of Replacement Metal Gate Patterning to Enable Gate-All-Around Device Scaling |
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| 12:30-14:00 | PARALELL POSTER SESSION | |
| 14:20 – 15:20 | SESSION 8 - FUNDAMENTALS OF MEGASONIC AGITATION | |
| 14:20 – 14:40 | 8.1 - Visualization of Acoustic Waves and Cavitation in Ultrasonic Water Flow | ||
| Usui, Hidehisa (1); Ishibashi, Tomoatsu (2); Matsuo, Hisanori (2); Watanabe, Katsuhide (2); Ando, Keita (1) 1: Keio University, Japan; 2: Ebara Corporation, Japan |
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| 14:40 – 15:00 | 8.2 - Effect of Surfactant in Gas Dissolved Cleaning Solutions on Acoustic Bubble Dynamics | ||
| Han, SoYoung (1); Yerriboina, Nagendra Prasad (1); Kim, Dong Gyu (1); Sahoo, Bichitra Nanda (1); Kang, Bong Kyun (3); Klipp, Andreas (4); Lim, Geon Ja (3); Kim, Tae Gon (2); Park, Jin Goo (1) 1: Department of Materials Science and Chemical Engineering, Hanyang University, Ansan, 15588, Republic of Korea; 2: Department of Smart Convergence Engineering, Hanyang University ERICA, Ansan 15588, Republic of Korea; 3: BASF Company Ltd., Suwon 16419, Republic of Korea; 4: BASF SE, Ludwigshafen, 67056, Germany |
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| 15:00 – 15:20 | 8.3 - Estimation of the Generation Rate of h· Radicals in a Megasonic Field Using an Electrochemical Technique | ||
| Han, Zhenxing (2); Raghavan, Srini (1); Beck, Mark (3) 1: University of Arizona, Materials Science and Engineering; 2: University of Arizona, Chemical and Environmental Engineering; 3: Product Systems, Inc. |
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| Thursday 15 April 2021 |
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| 10:50 – 12:50 | SESSION 9 - BEOL: INTERCONNECTS AND PACKAGING | |
| 10:30 – 10:50 | 9.1 - Copper Catalysis Effect Investigation for TiW Etch Process on Patterned Wafers | ||
| Venegoni, Ivan; Votta, Annamaria; Bellandi, Enrico; Pipia, Francesco; Alessandri, Mauro STMicroelectronics, Italy |
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| 10:50 – 11:10 | 9.2 - Selective nickel platinum removal without titanium nitride metal gate corrosion | ||
| Garnier Philippe (1); Audoin, Marine (2); Pizzetti, Christian (2); Loup, Virginie (3); Gabette, Laurence (3); Morote, Carlos (4); Dekraker, David (4); Schwab, Brent (4) 1: STMicroelectronics, France. 2: Technic, France; 3: CEA - Leti, France; 4: TEL Manufacturing and Engineering of America, USA |
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| 11:10 – 11:30 | 9.3 - Roughness and uniformity control during wet etching of molybdenum | ||
| Pacco, Antoine (1); Akanishi, Yuya (2); Le, QuocToan (1) - 1: imec, Belgium; 2: SCREEN, Semiconductor Solutions. | ||
| 11:30 – 11:50 | 9.4 - Effect of Surface Chemistry on Ruthenium Wet Etching | ||
| LE, Quoc Toan; KESTERS, Els; DOMS, Mathias; ALTAMIRANO SANCHEZ, Efrain - imec, Belgium | ||
| 11:50 – 12:10 | BREAK | |
| 12:10 – 15:10 | SESSION 10 - POST-CMP CLEANING | |
| 12:10 – 12:30 | 10.1 - Effect of Viscosity on Ceria Abrasive Removal in the Buffing CMP Process | ||
| Kim, Juhwan (1); Hong, Seokjun (1); Bae, Chulwoo (2); Wada, Yutaka (3); Hiyama, Hirokuni (3); Hamada, Satomi (3); Kim, Taesung (1,2) 1: Department of Mechanical Engineering, Sungkyunkwan University, Korea, Republic of (South Korea);2: Department of SKKU Advanced Institute of Nano Technology, Sungkyunkwan University, Korea, Republic of (South Korea); 3: Ebara Corp (Japan) |
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| 12:30 – 12:50 | 10.2 - Nodule Deformation of PVA Roller Brushes on a Rotating Plate: Optimum Cleaning for Nanosized Particles due to Liquid Absorption and Desorption of Sponge Deformation |
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| Miyaki, Tsubasa (1); Mizushima, Yuki (1); Hamada, Satomi (2); Koshino, Ryota (2); Fukunaga, Akira (2); Sanada, Toshiyuki (1) 1: Shizuoka University, Japan; 2: Ebara Corporation, Japan |
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| 12:50 – 13:10 | 10.3 - Mechanism of PVA Brush Loading with Ceria Particles during Post-CMP Cleaning Process | ||
| Sahir, Samrina (1); Cho, Hwi-Won (1); Yerriboina, Nagendra Prasad (1); Kim, Tae-Gon (2); Wada, Yutaka (3); Hamada, Satomi (3); Hiyama, Hirokuni (3); Park, Jin-Goo (1) 1: 1: Department of Materials Science and Chemical Engineering, Hanyang University, Ansan, 15588, Korea; 2: Department of Smart Convergence Engineering, Hanyang University, Ansan, Republic of Korea, 15588.; 3: EBARA Corporation, Fujisawa, Kanagawa, Japan |
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| 13:10 – 13:30 | 10.4 - Effect of Dissolved Oxygen on Removal of Benzotriazole from Co during a Post-Co CMP Cleaning | ||
| Ryu, Heon-Yul (1); Sahoo, Bichitra Nanda (1); Yerriboina, Nagendra Prasad (1); Kim, Tae-Gon (1); Hamada, Satomi (2); Park, Jin-Goo (1) 1: Hanyang University, Korea, Republic of (South Korea); 2: EBARA Corporation, Japan |
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| 13:30 – 14:30 | BREAK (PC MEETING) | |
| 14:30 – 14:50 | 10.5 - Tribological Characterization of Anionic Supramolecular Assemblies in Post-STI-CMP Cleaning Solution Using a Novel Post-CMP PVA Brush Scrubber | ||
| Philipossian, Ara (1); Sampurno, Yasa (1); Theng, Sian (1); Sudargho, Fransisca (1);Wortman-Otto, Katherine (2); Graverson, Carolyn (2); Keleher, Jason (2) 1: Araca, Inc., USA; 2: Lewis University, USA |
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| 14:50 – 15:10 | 10.6 - Contact vs. Non-Contact Cleaning: Correlating interfacial reaction mechanisms to processing methodologies for enhanced FEOL/BEOL post-CMP cleaning |
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| Katherine M. Wortman-Otto, Abigail N. Linhart, Allie M. Mikos, Kiana A. Cahue, and Jason J. Keleher Lewis University, Department of Chemistry, Romeoville IL |
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| 15:20 – 16:00 | SESSION 11 - CONCLUDING REMARKS & BEST STUDENT PAPERS: AWARDS | |